sot-23 plastic-encapsulate mosfets CJ3134K n-channel mosfet features z lead free product is acquired z surface mount package z n-channel switch with low r ds (on) z operated at low logic level gate drive applications z load/power switching z interfacing switching z battery management for ultra small portable electronics z logic level shift marking: 34k maximum ratings (t a =25 unless otherwise noted) parameter symbol value unit drain-source voltage v ds 20 v gate-source voltage v gs 12 v continuous drain current (note 1) i d 0.75 a pulsed drain current (t p =10 s) i dm 1.8 a power dissipation (note 1) p d 350 mw thermal resistance from junction to ambient (note 1) r ja 357 /w junction temperature t j 150 storage temperature t stg -55~+150 lead temperature for soldering purposes(1/8? duration for 10 s) t l 260 so t -23 1. gate 2. source 3. drain 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,dec,2013
electrical characteristics (t a =25 unless otherwise noted) parameter symbol test condition min typ max unit static characteristics drain-source breakdown voltage v (br)dss v gs = 0v, i d =250a 20 v zero gate voltage drain current i dss v ds =20v,v gs = 0v 1 a gate-body leakage current i gss v gs =12v, v ds = 0v 50 a gate threshold voltage (note 2) v gs(th) v ds =v gs , i d =250a 0.35 1 v v gs =4.5v, i d =0.65a 380 m ? v gs =2.5v, i d =0.55a 450 m ? drain-source on-resistance (note 2) r ds(on) v gs =1.8v, i d =0.45a 800 m ? forward transconductance (note 2) g fs v ds =10v, i d =0.8a 1.6 s diode forward voltage v sd i s =0.15a, v gs = 0v 1.2 v dynamic characteristics (note 4) input capacitance c iss 79 120 pf output capacitance c oss 13 20 pf reverse transfer capacitance c rss v ds =16v,v gs =0v,f =1mhz 9 15 pf switching characteristics (note 4) turn-on delay time (note 3) t d(on) 6.7 ns turn-on rise time (note 3) t r 4.8 ns turn-off delay time (note 3) t d(off) 17.3 ns turn-off fall time (note 3) t f v gs =4.5v,v ds =10v, i d =500ma ,r gen =10 ? 7.4 ns notes : 1. surface mounted on fr4 board using the minimum recommended pad size. 2. pulse test : pulse width=300s, duty cycle=2%. 3. switching characteristics are independ ent of operating junction temperatures. 4. guaranteed by design, not subject to producting. 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,dec,2013
01234 0 1 2 3 4 12345 100 200 300 400 500 600 700 800 0.0 0.5 1.0 1.5 2.0 2.5 0.0 0.4 0.8 1.2 1.6 2.0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 1e-4 1e-3 0.01 0.1 1 10 25 50 75 100 125 0.3 0.4 0.5 0.6 0.7 0.8 0.3 0.6 0.9 1.2 1.5 1.8 2.1 0.0 0.2 0.4 0.6 0.8 1.0 v gs =10.0v 4.5v 3.5v v gs =2.5v drain current i d (a) drain to source voltage v ds (v) pulsed v gs =1.5v gate to source voltage v gs (v) on-resistance r ds(on) (m ? ) i d =0.65a t a =25 pulsed v gs ?? r ds(on) CJ3134K drain current i d (a) gate to source voltage v gs (v) v ds =5.0v pulsed t a =100 t a =25 transfer characteristics source current i s (a) source to drain voltage v sd (v) t a =25 pulsed v sd i s ?? output characteristics threshold voltage v th (v) junction temperature t j ( ) i d =250ua threshold voltage v gs =2.5v drain current i d (a) on-resistance r ds(on) ( ? ) i d ?? r ds(on) t a =25 pulsed v gs =4.5v v gs =1.8v 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,dec,2013
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